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Difference Between NPN and PNP Transistor

May 17, 2012Posted byAdmin

Difference Between NPN and PNP Transistor

NPN vs PNP Transistor Transistors are 3 terminal semiconductor devices used in electronics. Based on the internal operation and structure transistors are divided into two categories, Bipolar Junction Transistor (BJT) and Field Effect Transistor (FET). BJT’s were the first to be developed in1947 by John Bardeen and Walter Brattain at Bell Telephone Laboratories. PNP […]

Filed Under:PhysicsTagged With:Bipolar Junction Transistor,BJT,NPN transistor,PNP transistor

Difference Between BJT and FET

July 8, 2011Posted byAndrew

BJT vs FET Both BJT (Bipolar Junction Transistor) and FET (Field Effect Transistor) are two types of transistors. Transistor is an electronic semiconductor device that gives a largely changing electrical output signal for small changes in small input signals. Due to this quality, the device can be used as either an amplifier or a switch. […]

Filed Under:ComponentsTagged With:Bipolar Junction Transistor,BJT,CNTFET,FET,Field Effect Transistor,HEMT,IGBT,MOSFET,N channel FET,NPN,NPN transistor,P channel FET,PNP,PNP transistor,Transistors,unipolar transistor

Difference Between Transistor and Thyristor

July 7, 2011Posted byAdmin

Transistor vs Thyristor Both transistor and thyristor are semiconductor devices with alternating P type and N type semiconductor layers. They are used in many switching applications due to many reasons such as efficiency, low cost and small size. Both of them are three terminal devices, and they provide a good control range of current with […]

Filed Under:ComponentsTagged With:anode,base,cathode,collector,emitter,Gate,NPN,NPN transistor,PNP,PNP transistor,semiconductor devices,thyristor,thyristor applications,Transistor

Difference Between MOSFET and BJT

July 3, 2011Posted byAdmin

Difference Between MOSFET and BJT

MOSFET vs是晶体管or is an electronic semiconductor device that gives a largely changing electrical output signal for small changes in small input signals. Due to this quality, the device can be used as either an amplifier or a switch. Transistor was released in 1950s and it can be considered as one of the most […]

Filed Under:ComponentsTagged With:base,Bipolar Junction Transistor,BJT,collector,depletion mode,Drain,emitter,enhancement mode,FET,Field Effect Transistor,Gate,MOSFET,n channel MOSFET,NPN,NPN transistor,p channel MOSFET,PNP,PNP transistor,source,Transistor

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