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矩形脉冲断开vs SCR Both SCR (Silicon Controlled Rectifier) and GTO (Gate Turn-off Thyristor) are two types of thyristors made of four semiconductor layers. Both devices have three terminals called anode, cathode and gate, where a pulse on gate is used to control the current flowing through the device. SCR (Silicon Controlled Rectifier) SCR is a […]
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IGBT vs GTO GTO (Gate Turn-off Thyristor) and IGBT (Insulated Gate Bipolar Transistor) are two types of semiconductor devices with three terminals. Both of them are used to control currents and for switching purposes. Both devices have a controlling terminal called ‘gate’, but have different principals of operation. GTO (Gate Turn-off Thyristor) GTO is made […]