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Difference Between IGBT and GTO

July 25, 2011Posted byAdmin

IGBT vs GTO GTO (Gate Turn-off Thyristor) and IGBT (Insulated Gate Bipolar Transistor) are two types of semiconductor devices with three terminals. Both of them are used to control currents and for switching purposes. Both devices have a controlling terminal called ‘gate’, but have different principals of operation. GTO (Gate Turn-off Thyristor) GTO is made […]

Filed Under:ElectricalTagged With:coupled pair of transistors,forward blocking mode,forward conducting mode,Gate Turn-off Thyristor,矩形脉冲断开,矩形脉冲断开s,holding current,IGBT,Insulated Gate Bipolar Transistor,reverse blocking mode,阈值,thyristor

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