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Difference Between GTO and SCR

August 8, 2011Posted byAdmin

矩形脉冲断开vs SCR Both SCR (Silicon Controlled Rectifier) and GTO (Gate Turn-off Thyristor) are two types of thyristors made of four semiconductor layers. Both devices have three terminals called anode, cathode and gate, where a pulse on gate is used to control the current flowing through the device. SCR (Silicon Controlled Rectifier) SCR is a […]

Filed Under:ComponentsTagged With:Gate Turn-off Thyristor,矩形脉冲断开,矩形脉冲断开application,holding current,可控硅,可控硅application,Silicon Controlled Rectifier,thyristors,types of thyristors

Difference Between Diode and SCR

July 21, 2011Posted byAdmin

二极管vs SCR Both diode and SCR (Silicon Controlled Rectifier) are semiconductor devices with P type and N type semiconductor layers. They are used in many electronic switching applications. Both devices have terminals called ‘anode’ and ‘cathode’ but SCR has an additional terminal called ‘gate’. Both these devices have application dependant advantages. Diode Diode is […]

Filed Under:ComponentsTagged With:application of diode,application of SCR,二极管,holding current,可控硅,Silicon Controlled Rectifier,threshold,thyristor

Difference Between BJT and SCR

July 13, 2011Posted byAdmin

以下是对可控硅都BJT (Bipolar Junction Transistor) and SCR (Silicon Controlled Rectifier) are semiconductor devices with alternating P type and N type semiconductor layers. They are used in many switching applications due to many reasons such as efficiency, low cost, and small size. Both of them are three terminal devices, and they provide a […]

Filed Under:ComponentsTagged With:anode,base,Bipolar Junction Transistor,BJT,BJT applications,cathode,collector,emitter,Gate,holding current,NPN BJT,PNP BJT,power device,可控硅,可控硅applications,semiconductor devices,Silicon Controlled Rectifier,thyristor,Transistors,type of thyristors,类型的晶体管

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