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Difference Between IGBT and MOSFET

July 13, 2011Posted byAdmin

IGBT vs MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor) are two types of transistors, and both of them belong to the gate driven category. Both devices have similar looking structures with different type of semiconductor layers. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET is a type of […]

Filed Under:ComponentsTagged With:Bipolar Transistors,collector,depletion mode,digital CMOS logic,Drain,emitter,enhancement mode,Field Effect Transistors,Gate,gate driven transistors,IGBT,Insulated Gate Bipolar Transistor,场效应晶体管,场效应晶体管use,n channel MOSFET,p channel MOSFET,source,voltage controlled devices

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